Electronic Structure of Atoms
The Quantum-Mechanical Model of an Atom
The de Broglie Wavelength
Imperfections in Crystal Structure: Stoichiometric Point Defects
Energy Bands in Solids
Crystal Field Theory - Octahedral Complexes
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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Zhongchang Wang1, Mitsuhiro Saito1, Susumu Tsukimoto1
1WPI Research Center Advanced Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan).
An atomic carbon layer at the SiC/Ti3SiC2 interface improves material properties. This discovery explains the Ohmic contact in p-type silicon carbide (SiC) by enhancing adhesion and electrical transport.
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