Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Explainable residual ensemble modelling for EuroQol-5 dimensions-based quality-of-life assessment and stratification in patients with knee osteoarthritis.

Digital health·2026

Same author

Efficient Direct Recycling of Spent Batteries: Integrated Lithiation and Delamination.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same author

TiON/NiO<i><sub>x</sub></i> Heterojunction Neuron for CMOS-Compatible Hardware Implementation of Activation Function in Neural Network.

ACS applied materials & interfaces·2026

Same author

Numerical investigation of ultrasound-driven bubble-induced deformation of spherical solid cells.

Ultrasonics sonochemistry·2026

Same author

Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field Activation.

Small (Weinheim an der Bergstrasse, Germany)·2026

Same author

Energy- and Area-Efficient Ionic-Switch Activation Neuron for Monolithic 3D Neural Network Architectures.

ACS nano·2026

Same journal

Ordered Polar Topological Domains Enabling Giant Second-Harmonic Generation in Ferroelectric Nematic Liquid Crystals.

Advanced materials (Deerfield Beach, Fla.)·2026

Same journal

Dual-Functional Alumina Additive Enabling Efficient, Volumetric Mechanoluminescence for Nighttime Safety Footwear.

Advanced materials (Deerfield Beach, Fla.)·2026

Same journal

Phase Transformation Accompanied by Evolution of Internal Stress and the Coupling Mechanism of Chemical-Mechanical Degradation in Single-Crystal NiRich Cathodes.

Advanced materials (Deerfield Beach, Fla.)·2026

Same journal

Zwitterionic Polymer Electrolytes With Dipole-Rotation-Assisted Ion Conduction for Solid Lithium Metal Batteries.

Advanced materials (Deerfield Beach, Fla.)·2026

Same journal

3D-Printed Ultra-Thin Solid Polymer Electrolytes with Superior Dielectric Properties for Wide Temperature Range All-Solid-State Batteries.

Advanced materials (Deerfield Beach, Fla.)·2026

Same journal

Electrostatic Potential Tuning by Low-Volatility Halogenated Additive: Boosting PTQ10-Based Binary OPV to Near 20% Efficiency with High Scalability.

Advanced materials (Deerfield Beach, Fla.)·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Apr 21, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory.

Daeseok Lee¹, Jaesung Park, Jaehyuk Park

¹Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 790-784, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)

|November 8, 2014

Summary

This summary is machine-generated.

Researchers developed a novel 3D high-density switching device using titanium oxide. This innovation significantly suppresses sneak current in one-Resistive Random-Access Memory (ReRAM) devices, enabling high-density memory applications.

Keywords:

3D structure cross-point array metal-insulator transition non-volatilememory titanium oxide two-terminal switch

More Related Videos

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Related Experiment Videos

Last Updated: Apr 21, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

High-density memory is crucial for modern electronics.
Resistive Random-Access Memory (ReRAM) offers potential for high-density storage.
Sneak currents in ReRAM arrays hinder performance and scalability.

Purpose of the Study:

To realize a practical 3D high-density switching device.
To utilize titanium oxide as an optimal switching material.
To suppress sneak current in ReRAM devices for improved performance.

Main Methods:

Fabrication of a 3D switching device structure.
Material characterization of titanium oxide.
Electrical testing of the device in a 1S1R configuration.

Main Results:

Successful realization of a 3D switching device using titanium oxide.
Demonstration of significantly suppressed sneak current.
Exhibition of viable memory characteristics in the 1S1R configuration.

Conclusions:

Titanium oxide is a promising material for 3D switching devices.
The developed device effectively mitigates sneak current issues in ReRAM.
This technology paves the way for practical high-density ReRAM applications.