Related Experiment Video
Updated: Apr 20, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared
Abstract:
Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic phase shifters require 700 mW of power for a 2π phase shift. The required power is brought down to 80 mW by complete undercut using focused ion beam. Finally an efficient thermo-optic phase shifter is demonstrated on the germanium on SOI platform. A tuning power (for a 2π phase shift) of 105 mW is achieved for a Ge-on-SOI structure which is lowered to 16 mW for a free standing phase shifter.
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