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Characterizing integration time and gray-level-related nonlinearities in a NMOS sensor
Applied Optics
|November 18, 2014
Summary
A nonlinearity effect in spectroradiometers was identified, caused by photoelectrons during sensor readout. A new, simple method effectively corrects this integration-time-related issue in negative-module metal-oxide semiconductor sensors.
Area of Science:
- Optics and Photonics
- Sensor Technology
- Metrology
Background:
- Double-beam spectroradiometers are crucial for accurate light measurement.
- Negative-module metal-oxide semiconductor (NMOS) sensors are widely used in these instruments.
- Integration time is a critical parameter affecting sensor performance.
Purpose of the Study:
- To investigate and report a nonlinearity effect in NMOS sensors related to integration time.
- To explain the physical mechanism behind this nonlinearity.
- To develop and validate a novel method for correcting sensor nonlinearities.
Main Methods:
- Characterization of nonlinearity in a double-beam spectroradiometer using NMOS sensors.
- Experimental investigation of the impact of integration time on sensor output.
- Development of a new correction procedure for gray-level and integration-time nonlinearities.
Main Results:
- A significant nonlinearity effect was observed and attributed to photoelectron addition during the readout phase.
- The proposed method successfully characterized and corrected both gray-level and integration-time-related nonlinearities.
- The new correction method demonstrated superior performance compared to existing procedures.
Conclusions:
- Integration time significantly influences the linearity of NMOS sensors in spectroradiometers.
- A novel, experimentally simple method provides effective correction for NMOS sensor nonlinearities.
- This advancement improves the accuracy and reliability of spectroradiometric measurements.
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