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The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template
Changjun Jiang1, Lei Wu1, WenWen Wei1
1Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China.
Abstract:
A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect.
Pacs:
68.37.-d; 73.40.Rw; 73.61.-r.
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