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Electrostatic Boundary Conditions in Dielectrics

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Dielectric screening in atomically thin boron nitride nanosheets.

Lu Hua Li¹, Elton J G Santos, Tan Xing

¹Institute for Frontier Materials, Deakin University , Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia.

|December 3, 2014

Summary

Hexagonal boron nitride (BN) nanosheets are crucial 2D substrates. Their electric field screening capability is less effective for thinner layers but shows weak thickness dependence.

Keywords:

boron nitride nanosheets electric field screening electric force microscopy (EFM)first-principles calculations nonlinear Thomas−Fermi theory

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets serve as critical dielectric substrates for advanced 2D electronic and photonic devices.
Understanding the dielectric screening properties of BN nanosheets is vital for optimizing device performance.

Purpose of the Study:

To investigate the dielectric screening properties of hexagonal boron nitride (BN) nanosheets across various thicknesses.
To determine the relationship between BN nanosheet thickness and its electric field screening capability.

Main Methods:

Utilized electric force microscopy to experimentally probe dielectric screening.
Employed state-of-the-art first-principles calculations, including van der Waals interactions.
Applied nonlinear Thomas-Fermi theory models for theoretical analysis.

Main Results:

Atomically thin hexagonal boron nitride (BN) nanosheets exhibit reduced effectiveness in electric field screening.
The dielectric screening capability of BN nanosheets demonstrates a relatively weak dependence on the number of layers.

Conclusions:

The dielectric screening of hexagonal boron nitride (BN) is layer-dependent, though not strongly.
These findings provide essential insights for designing and optimizing 2D material-based devices utilizing BN substrates.