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Updated: Apr 20, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Electron imaging with an EBSD detector.
Stuart I Wright1, Matthew M Nowell1, René de Kloe2
1EDAX, 392 East 12300 South, Suite H, Draper, UT 84020, USA.
Electron Backscatter Diffraction (EBSD) can now create high-speed images using its detector, offering topographic and orientation contrast. This advancement allows for faster microstructure characterization in scanning electron microscopy (SEM).
Area of Science:
- Materials Science
- Microscopy
- Crystallography
Background:
- Electron Backscatter Diffraction (EBSD) is a key technique for analyzing crystallographic orientation in microstructures within scanning electron microscopes (SEM).
- Traditional EBSD analysis involves pattern indexing, which can be time-consuming.
Purpose of the Study:
- To explore the use of the EBSD detector as a high-speed imaging device.
- To enable faster acquisition of microstructure images with topographic and orientation contrast.
Main Methods:
- Utilizing high-speed digital cameras with extreme binning (5x5 pixel patterns) for EBSD data acquisition.
- Employing the EBSD detector as an imaging device without pattern indexing.
- Forming images from a 5x5 array of pixels, each acting as a scattered electron detector.
Main Results:
- High-speed image acquisition rates comparable to conventional SEM imaging are achievable.
- Images with topographic, atomic density, and orientation contrast can be generated.
- Image data can be acquired during scans or post-processed from existing EBSD patterns.
Conclusions:
- The EBSD detector can function as an effective imaging device for rapid microstructure visualization.
- This method facilitates correlative analysis with traditional EBSD orientation data and X-Ray Energy Dispersive Spectroscopy (XEDS) chemical data.

