Quantitative investigation of SiGeC layers using atom probe tomography

Area of Science:

• Materials Science
• Nanotechnology
• Surface Science

Background:

• Accurate elemental quantification in multilayered semiconductor structures is crucial for device performance.
• SiGeC alloys are important for advanced electronic and optoelectronic applications, requiring precise compositional analysis.

Purpose of the Study:

• To investigate the quantification of carbon and germanium in Si/SiGeC multilayer structures using atom probe tomography.
• To determine the optimal analysis conditions for accurate elemental composition measurements.
• To elucidate the evaporation mechanisms influencing mass spectra during atom probe tomography analysis.

Main Methods:

• Atom probe tomography (APT) was employed to analyze Si/SiGeC multilayer structures.
• Systematic variation of analysis parameters, including electric field and laser power, was performed.
• Multi-ion event analysis was utilized to study evaporation phenomena.

Main Results:

• Optimal quantitative results for carbon and germanium were achieved with intermediate electric field and laser power settings.
• Carbon evaporation exhibited strong spatial and temporal correlations, indicating specific behaviors during analysis.
• Analysis of multi-ion events provided insights into the modification of mass spectra under varying electric field and laser power conditions.

Conclusions:

• Atom probe tomography is a viable technique for quantifying carbon and germanium in Si/SiGeC multilayers.
• Understanding the influence of analysis parameters is key to achieving accurate compositional data.
• A proposed evaporation mechanism explains the observed mass spectral changes, aiding in data interpretation.