Quantitative investigation of SiGeC layers using atom probe tomography

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Robert Estivill1, Adeline Grenier2, Sébastien Duguay3

  • 1CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France; STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France; Groupe de Physique des Matériaux - GPM UMR CNRS 6634, Université de Rouen, France.

Ultramicroscopy
|December 16, 2014
PubMed

Keywords:
Atom probeCarbon doped SiGeMolecular ionsMulti-eventsSiGe quantification

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