Related Experiment Video
Updated: Apr 19, 2026
12:57
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
9.7K
Ground-state lasing in high-power InAs/GaAs quantum dots-in-a-well laser using active multimode interference
Optics Letters
|December 23, 2014
Summary
We developed novel InAs/GaAs quantum dot laser diodes using active multimode interferometer (MMI) structures for high-power, single-mode operation. This breakthrough achieves 2.4x higher output power than conventional lasers with suppressed excited-state lasing.
Area of Science:
- Semiconductor Lasers
- Quantum Dot Technology
- Optoelectronics
Background:
- Quantum dots-in-a-well (DIP) structures offer unique optoelectronic properties.
- Short-cavity laser diodes often struggle with mode control and power output.
- Multimode interferometer (MMI) structures are typically used for beam splitting and combining.
Purpose of the Study:
- To design and demonstrate InAs/GaAs quantum dot-in-a-well laser diodes for short cavities.
- To achieve transverse fundamental mode operation using an active MMI structure.
- To enhance output power and suppress excited-state lasing.
Main Methods:
- Fabrication of InAs/GaAs quantum dots-in-a-well laser diodes.
- Integration of an active multimode interferometer (MMI) structure.
- Characterization of room-temperature continuous-wave (RT-CW) lasing performance.
Main Results:
- Achieved ground-state lasing at 1280 nm with 116 mW output power per facet.
- Demonstrated 2.4 times higher output power compared to conventional ridge laser diodes.
- Successfully suppressed excited-state (ES) lasing even at high injection currents (400 mA).
Conclusions:
- The novel MMI-based quantum dot laser diodes enable high-power, single-mode emission.
- This design offers a significant improvement over conventional ridge laser diodes.
- The devices show potential for low power consumption and simplified fabrication for advanced optoelectronic applications.
