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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
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Performance potential and limit of MoS2 transistors
Xuefei Li1, Lingming Yang, Mengwei Si
1Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
Advanced Materials (Deerfield Beach, Fla.)
|January 15, 2015
Summary
High-performance molybdenum disulfide (MoS2) transistors show excellent drive current and low electrical noise. Researchers observed negative differential resistance, identifying self-heating as the cause using pulsed measurements.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Molybdenum disulfide (MoS2) is a promising 2D material for next-generation electronics.
- Scaling down transistors is crucial for improving device performance and integration.
Purpose of the Study:
- To investigate the performance of scaled MoS2 transistors at cryogenic temperatures.
- To characterize the electrical noise and identify the origin of negative differential resistance (NDR) in these devices.
Main Methods:
- Fabrication and characterization of 100 nm MoS2 transistors.
- Electrical measurements across a range of temperatures (down to 20 K).
- Pulsed-current-voltage (I-V) measurements to analyze device behavior.
Main Results:
- Achieved a highest drive current of 800 μA μm⁻¹.
- Recorded extremely low electrical noise (2.8 × 10⁻¹⁰ μm² Hz⁻¹) at room temperature and 10 Hz.
- Experimentally observed negative differential resistance (NDR) behavior.
Conclusions:
- MoS2 transistors exhibit high performance even at cryogenic temperatures.
- Self-heating is identified as the primary mechanism responsible for the observed NDR.
- These findings highlight the potential of MoS2 for advanced electronic applications.
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