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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Conductance oscillations induced by ballistic snake states in a graphene heterojunction
Thiti Taychatanapat1, Jun You Tan1, Yuting Yeo1
11] Graphene Research Centre, National University of Singapore, Singapore 117542, Singapore [2] Department of Physics, National University of Singapore, Singapore 117542, Singapore.
Abstract:
The realization of p-n junctions in graphene, combined with the gapless and chiral nature of its massless Dirac fermions has led to the observation of many intriguing phenomena such as the quantum Hall effect in the bipolar regime, Klein tunnelling and Fabry-Pérot interferences, all of which involve electronic transport across p-n junctions. Ballistic snake states propagating along the p-n junctions have been predicted to induce conductance oscillations, manifesting their twisting nature. However, transport studies along p-n junctions have so far only been performed in low mobility devices. Here, we report the observation of conductance oscillations due to ballistic snake states along a p-n interface in high-quality graphene encapsulated by hexagonal boron nitride. These snake states are exceptionally robust as they can propagate over 12 μm, limited only by the size of our sample, and survive up to at least 120 K. The ability to guide carriers over a long distance provide a crucial building block for graphene-based electron optics.
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