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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Ming-Hao Liu1, Peter Rickhaus2, Péter Makk2
1Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany.
Simulations of artificial graphene accurately predict real graphene's transport properties. This allows for efficient simulations of complex graphene devices, reducing computational cost.
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