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Published on: May 24, 2020
Low-voltage flexible organic electronics based on high-performance sol-gel titanium dioxide dielectric.
Sujin Sung1, Sungjun Park1, Won-June Lee1
1†School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
High-performance insulating films made from sol-gel processed titanium dioxide (TiO2) offer low leakage and high capacitance. This enables low-voltage flexible organic thin-film transistors for advanced electronic applications.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Titanium dioxide (TiO2) is a wide-bandgap semiconductor with potential for dielectric applications.
- Controlling the microstructure of TiO2 films is crucial for optimizing their insulating properties.
Purpose of the Study:
- To investigate the generation of high-performance insulating films through controlled microstructure of sol-gel processed TiO2.
- To demonstrate the application of these TiO2 films in low-voltage flexible organic thin-film transistors.
Main Methods:
- Sol-gel processing of titanium dioxide (TiO2) films.
- Microstructural characterization of the TiO2 dielectric layer.
- Fabrication and electrical characterization of pentacene-based organic thin-film transistors.
Main Results:
- A 23 nm-thick TiO2 dielectric layer achieved a low leakage current density of approximately 1 × 10(-7) A cm(-2) at 2 V.
- The TiO2 dielectric layer exhibited a high areal capacitance of 560 nF cm(-2) with a dielectric constant of 27.
- Successful demonstration of low-voltage flexible organic thin-film transistors using the solution-processed TiO2 dielectric on polyimide substrates.
Conclusions:
- Judicious control over TiO2 microstructure enables high-performance insulating films.
- Solution-processed TiO2 dielectric materials are versatile for flexible electronics.
- The developed TiO2 films are suitable for low-voltage organic thin-film transistor applications.

