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High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111)
Robert Koester1, Daniel Sager1, Wolf-Alexander Quitsch1
1†Solid-State Electronics Department, ‡Werkstoffe der Elektrotechnik, Faculty of Engineering, and CENIDE, University Duisburg-Essen, D-47048 Duisburg, Germany.
Nano Letters
|March 12, 2015
Summary
Gallium nitride nanowire LEDs overcome speed limitations for faster optical data communication. These devices show rapid on-off performance, enabling high-speed data transmission.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Gallium nitride (GaN)-based light-emitting diodes (LEDs) grown in the c-plane direction face performance limitations due to long carrier lifetimes.
- Spontaneous and piezoelectric polarization effects in c-plane GaN LEDs hinder high-speed on-off switching capabilities.
Purpose of the Study:
- To overcome the speed limitations of GaN-based LEDs by exploring alternative growth structures.
- To demonstrate the potential of m-planar core-shell indium gallium nitride/gallium nitride (InGaN/GaN) nanowire LEDs for high-speed applications.
Main Methods:
- Growth of m-planar core-shell InGaN/GaN nanowire LEDs on a silicon (Si(111)) substrate.
- Time-resolved electroluminescence studies under high-frequency (GHz) electrical excitation.
Main Results:
- Achieved 90-10% rise and fall times of approximately 220 picoseconds (ps).
- Demonstrated significantly improved on-off performance compared to conventional c-plane GaN LEDs.
Conclusions:
- M-planar core-shell InGaN/GaN nanowire LEDs offer a viable solution to overcome carrier lifetime limitations in GaN-based devices.
- These nanowire LEDs show strong potential for high-speed optical data communication applications, including in polymer fibers and free-space transmission.
