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Updated: Apr 16, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Observation of deflection of a beam of multi-GeV electrons by a thin crystal
U Wienands1, T W Markiewicz1, J Nelson1
1SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.
Abstract:
We report on an experiment performing channeling and volume reflection of a high-energy electron beam using a quasimosaic, bent silicon (111) crystal at the End Station A Test Beam at SLAC. The experiment uses beams of 3.35 and 6.3 GeV. In the channeling orientation, deflections of the beam of 400 μrad for both energies with about 22% efficiency are observed, while in the volume-reflection orientation, deflection of the beam by 120 μrad at 3.35 GeV and by 80 μrad at 6.3 GeV is observed with 86%-95% efficiency. Quantitative measurements of the channeling efficiency, surface transmission, and dechanneling length are taken. These are the first quantitative measurements of channeling and volume reflection using a primary beam of multi-GeV electrons.
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