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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Single-atom based coherent quantum interference device structure.

Borislav Naydenov1, Ivan Rungger1, Mauro Mantega1

  • 1†School of Chemistry, ‡School of Physics, and §Center for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College, Dublin 2, Ireland.

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|April 1, 2015
PubMed
Summary
This summary is machine-generated.

We developed a quantum interference device (QID) using single atoms on silicon, achieving high ON-OFF ratios. This atom-controlled device shows promise for low-power electronics.

Keywords:
DFTQuantum confinementSi(100)nanodevicescanning tunneling spectroscopy (STS)

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Area of Science:

  • Quantum electronics
  • Atomic-scale device fabrication
  • Solid-state physics

Background:

  • Quantum interference devices (QIDs) offer potential for novel electronic functionalities.
  • Controlling quantum phenomena at the atomic scale is crucial for next-generation computing.

Purpose of the Study:

  • To fabricate and characterize a coherent single-atom quantum interference device (QID) on Si(100).
  • To investigate the control of QID properties using single atoms.
  • To simulate and validate the device's electronic structure and performance.

Main Methods:

  • Fabrication of a coherent single-atom QID structure on Si(100).
  • Scanning tunneling spectroscopy (STS) for visualizing wave function distribution.
  • Direct measurement of evanescent wave function amplitude and phase.
  • Density functional theory (DFT) for electronic structure simulations.

Main Results:

  • Successful fabrication and characterization of the single-atom QID.
  • Experimental visualization of wave function energy and spatial distribution.
  • Direct measurement of wave function coupling into quantum well states, including electrostatic gate effects.
  • DFT simulations showed excellent agreement with experimental measurements.
  • Simulations predicted high ON-OFF ratios (>10^3) for the QID.

Conclusions:

  • Coherent single-atom QID structures on Si(100) are feasible.
  • Single-atom properties can effectively control device operation.
  • The demonstrated QID exhibits high performance potential with minimal power dissipation.