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Related Experiment Videos

A high power microwave triggered RF opening switch.

S Beeson1, J Dickens1, A Neuber1

  • 1Department of Electrical and Computer Engineering, Center for Pulsed Power and Power Electronics, Texas Tech University, Lubbock, Texas 79409, USA.

The Review of Scientific Instruments
|April 3, 2015
PubMed
Summary
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A novel 4-port S-band waveguide switch uses plasma to rapidly control microwave signals. This device achieves fast switching speeds for high-power applications, enabling efficient signal modulation.

Area of Science:

  • Microwave Engineering
  • Plasma Physics
  • Waveguide Technology

Background:

  • High-power microwave systems require efficient and fast switching components.
  • Existing switching technologies may face limitations in speed, insertion loss, or isolation.

Purpose of the Study:

  • To design and fabricate a 4-port S-band waveguide structure for rapid signal switching.
  • To achieve high isolation and low insertion loss in the switched states.

Main Methods:

  • Utilized COMSOL 4.4 for electromagnetic simulation and optimization at 2.85 GHz.
  • Designed a TE111 resonator/plasma cell at the waveguide junction.
  • Fabricated and performed cold tests (without plasma) and temporal waveform measurements.

Main Results:

Related Experiment Videos

  • Achieved switching from a closed state (<0.5 dB IL) to an open state (>30 dB IL).
  • Demonstrated a 90/10 switching time as low as 20 ns with a ~30 ns delay.
  • Successfully switched a 2 W continuous wave (CW) signal to <5 mW on a sub-microsecond timescale.

Conclusions:

  • The designed 4-port waveguide structure effectively switches high-power microwave signals using plasma initiation.
  • The device offers rapid switching speeds and high isolation, suitable for demanding applications.
  • The results validate the design and demonstrate the potential of plasma-based switching in S-band frequencies.