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Updated: Apr 15, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green

Guo-En Weng1, Wan-Ru Zhao2, Shao-Qiang Chen3

  • 1Department of Physics and Semiconductor Photonics Research Center, Xiamen University, 422 South Siming Road, Xiamen, 361005 P. R. China.

Nanoscale Research Letters
|April 9, 2015
PubMed

Keywords:
Carrier relaxation dynamicsInGaNLocalization effectQuantum dots

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