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Updated: Apr 15, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Fe-Al-C carbide phase nano-layer investigation as a substrate for epitaxial diamond growth
1G. V. Kurdyumov Institute for Metal Physics of the N.A.S. of Ukraine, 36 Academician Vernadsky Boulevard UA-03680, Kyiv -142, Ukraine.
Abstract:
Calculations of electron structure of supercells consisting of several layers of ordinary stoichiometric K-phase and modified K-phase, on which according to our assumptions epitaxial growth of diamonds is possible, were conducted. Stability of calculated cells was considered, and optimal number of layers of the stoichiometric K-phase in the supercell was determined in order for it to be thermodynamically stable. Electronic structure of carbon in the modified K-phase layer was considered and compared to electron structure of carbon in diamond.

