High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer...

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Resistive switching memory is a promising candidate for next-generation nonvolatile memory.
• Developing reliable and high-performance switching materials is crucial for memory advancement.

Purpose of the Study:

• To fabricate and characterize resistive switching memory cross-point arrays using TiN/HfO x /AlO y /Pt structures.
• To evaluate the performance and reliability of atomic layer deposition (ALD)-fabricated HfO x /AlO y bi-layers for memory applications.

Main Methods:

• Fabrication of TiN/HfO x /AlO y /Pt cross-point memory arrays.
• Deposition of 5-nm HfO x and 3-nm AlO y bi-layered films using atomic layer deposition (ALD).
• Characterization of device performance, including switching voltage, resistance ratio, uniformity, and reliability.

Main Results:

• Demonstrated excellent device performance with low switching voltage and large resistance ratio.
• Achieved good cycle-to-cycle and device-to-device uniformity in 24x24 arrays.
• Presented multi-level data storage capability and robust reliability characteristics.

Conclusions:

• ALD-fabricated HfO x /AlO y bi-layers exhibit great potential for next-generation nonvolatile memory.
• The developed memory arrays show promising characteristics for practical applications.
• The study highlights the viability of ALD for scalable and high-performance memory fabrication.