Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
Shih-Wei Lin1, Yue-Han Wu2, Li Chang2
1Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010 Taiwan.
Nanoscale Research Letters
|April 9, 2015
Abstract:
We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.


