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Updated: Apr 15, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Positronics of subnanometer atomistic imperfections in solids as a high-informative structure characterization tool
Oleh Shpotyuk1, Jacek Filipecki2, Adam Ingram3
1Lviv Institute of Materials of SRC "Carat", Stryjska str., 202, Lviv, 79031 Ukraine ; Jan Dlugosz University, Al. Armii Krajowej, 13/15, Czestochowa, 42201 Poland.
Abstract:
Methodological possibilities of positron annihilation lifetime (PAL) spectroscopy applied to characterize different types of nanomaterials treated within three-term fitting procedure are critically reconsidered. In contrast to conventional three-term analysis based on admixed positron- and positronium-trapping modes, the process of nanostructurization is considered as substitutional positron-positronium trapping within the same host matrix. Developed formalism allows estimate interfacial void volumes responsible for positron trapping and characteristic bulk positron lifetimes in nanoparticle-affected inhomogeneous media. This algorithm was well justified at the example of thermally induced nanostructurization occurring in 80GeSe2-20Ga2Se3 glass.
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