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Published on: June 3, 2015
Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based
1Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072 People's Republic of China.
Abstract:
Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasing from the metal-insulator-semiconductor devices.
