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Updated: Apr 15, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
Suixing Shi1, Zhi Zhang2, Zhenyu Lu1
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083 China.
Abstract:
In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

