Related Experiment Video
Updated: Apr 15, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for
Eun-Hye Lee1, Jin-Dong Song2, Il-Ki Han2
1Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 136-791 South Korea ; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 South Korea.
Abstract:
The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
