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Local density of states at metal-semiconductor interfaces: an atomic scale study

T Iffländer1, S Rolf-Pissarczyk1, L Winking1

  • 1IV. Physical Institute - Solids and Nanostructures, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

Physical Review Letters
|April 25, 2015
PubMed
Summary

We studied iron on gallium arsenide interfaces using atomic resolution microscopy. Our findings reveal metal-induced gap states and bond polarization are key to understanding Schottky barrier height at these semiconductor interfaces.

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