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Updated: Apr 12, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered
Sung Pyo Park1, Doo Hyun Yoon, Young Jun Tak
1School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea. hjk3@yonsei.ac.kr.
Abstract:
Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO(x)) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO(x) RRAM devices could be one of the candidates for the development of low cost RRAM.
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