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Updated: Apr 12, 2026
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Study of Carbon Nanotubes as Etching Masks and Related Applications in the Surface Modification of GaAs-based
Yuanhao Jin1,2, Qunqing Li1,2, Mo Chen1,2
1State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics & Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China.
Abstract:
The surface modification of LEDs based on GaAs is realized by super-aligned multiwalled carbon nanotube (SACNT) networks as etching masks. The surface morphology of SACNT networks is transferred to the GaAs. It is found that the light output power of LEDs based on GaAs with a nanostructured surface morphology is greatly enhanced with the electrical power unchanged.
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