High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Quantum well (QW) lasers are crucial optoelectronic devices.
• Developing high-performance lasers at specific wavelengths is an ongoing research area.
• InAs/InGaAs/InP material systems offer potential for infrared laser applications.

Purpose of the Study:

• To demonstrate high-performance 2150 nm InAs/InGaAs/InP quantum well (QW) lasers.
• To characterize their continuous wave (CW) and pulsed operation at room temperature (RT).
• To investigate wavelength tunability and temperature performance.

Main Methods:

• Metalorganic vapor phase epitaxy (MOVPE) for growing InAs/InGaAs/InP QWs.
• Fabrication of ridge waveguide lasers with cleaved cavity facets.
• Characterization of light-current (L-I) and spectral properties under CW and pulsed conditions.
• Temperature-dependent measurements to determine characteristic temperatures.

Main Results:

• Achieved continuous wave (CW) operation at room temperature (RT) with >160 mW output power per facet.
• Low threshold current density of 90.4 A/cm² per QW (infinite cavity length).
• Maximal peak power of 1.35 W per facet under pulse injection.
• Wavelength tunability from 2142 nm to 2154 nm by varying cavity length.
• Highest operating temperature of 100 °C, with characteristic temperatures T(0) = 50 K and T(1) = 132 K (20-70 °C).

Conclusions:

• Demonstrated high-performance 2150 nm InAs/InGaAs/InP QW lasers.
• The devices exhibit excellent power, efficiency, and temperature stability for RT operation.
• These lasers are promising for applications requiring emission around 2150 nm.