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Updated: Apr 12, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Depletion effect of oxide semiconductor analyzed by Hall effects
Abstract:
This letter discusses the tunneling behavior of amorphous indium-gallium-zinc-oxide (a-IGZO) analyzed through the observation of its Hall effects. The properties of the a-IGZO changed from those of a majority carrier to those of a minority carrier after the annealing process as a result of the electron-hole recombination due to the thermal activation energy and the formation of a depletion layer with a high-potential Schottky barrier. Therefore, the diffusion current of these minority charge carriers caused ambipolar transfer characteristics, a tunneling behavior, in the metal-oxide semiconductor (MOS) transistor.
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