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Transparent Bipolar Thin Film Transistors Based on Topological Insulator of Magneto-Resistive Effect
1Department of Semiconductor Engineering, Cheongju University, Cheongju, 28503, Republic of Korea.
Abstract:
Thin film transistors using SiOC insulation film generated a very large IDS current with tunneling phenomena due to the occurrence of space charge limit current due to magnetic resistance effect. When SiOC gate insulation barrier transistor characteristics were investigated, transmission characteristics of bi-directional were observed, low current at levels ~10-7 A, but switching characteristics were superior to or greater than 10-10 A. SiOC Thin Film Insulation Characteristics are a good material for observing magnetic resistance effects, SiOC Transistors without channels clearly demonstrate the difference in spatial charges due to electromagnetic phenomena, and even in low-current insulation, nano-current flows at high speed. The current due to magnetic resistance is bi-directional and has an alternating current that flows in both directions at 0 V.
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