Related Experiment Video
Updated: Apr 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Fabrication and electrical characterization of graphene formed chemically on nickel nano electro mechanical system
Abstract:
In this work, we successfully fabricated a reliable nano-electro-mechanical system (NEMS) switch with graphene formed chemically on pre-patterned nickel (Ni) film movable beam. Its electrical characteristics were investigated in terms of current-voltage (I-V) and repetitive switching (on/off) properties. The graphene in the movable beam was selectively formed chemically only on the patterned Ni film. Graphene material may help overcome the stiction and reliability problems in nano-electro-mechanical devices. A study on graphene cantilever already has been reported by using only single or multi-layer of transferred graphene. However, the graphene selectively grown on Ni film has not been reported for NEMS switch. The graphene grown on Ni film by chemical vapor deposition method (CVD) were characterized by Raman spectroscopy. The fabricated lateral NEMS switch has w/l/t = 500 nm/20 μm/150 nm as a Ni dimension and an air-gap of -300 nm in lateral direction. The fabricated graphene movable beam formed chemically on Ni film shows reduced pull-in voltage and improved endurance (extended repetitive switching operations).
More Related Videos
07:51Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
10:57Synthesis and Performance Characterizations of Transition Metal Single Atom Catalyst for Electrochemical CO2 Reduction
Published on: April 10, 2018