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Reliable synthesis of self-running Ga droplets on GaAs (001) in MBE using RHEED patterns
Beni Adi Trisna1, Nitas Nakareseisoon1, Win Eiwwongcharoen1
1Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phyathai Road, Patumwan, Bangkok, 10330 Thailand.
Abstract:
Self-running Ga droplets on GaAs (001) surfaces are repeatedly and reliably formed in a molecular beam epitaxial (MBE) chamber despite the lack of real-time imaging capability of a low-energy electron microscope (LEEM) which has so far dominated the syntheses and studies of the running droplets phenomenon. Key to repeatability is the observation and registration of an appropriate reference point upon which subsequent sublimation conditions are based. The reference point is established using reflection high-energy electron diffraction (RHEED), not the noncongruent temperature used in LEEM where temperature discrepancies up to 25°C against MBE is measured. Our approach removes instrumental barriers to the observation and control of this complex dynamical system and may extend the usefulness of many droplet-related processes.
