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Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
Xichao Zhang1, Yan Zhou2, Motohiko Ezawa3
1Department of Physics, University of Hong Kong, Hong Kong, China.
Abstract:
Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.
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