Related Experiment Video
Updated: Apr 8, 2026
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
16.3K
Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure
Dmitry Yu Usachov1, Alexander V Fedorov1,2,3, Anatoly E Petukhov1
1†Saint Petersburg State University, 198504 St. Petersburg, Russia.
ACS Nano
|July 1, 2015
Summary
Researchers developed a chemical vapor deposition method to create large-scale boron-doped graphene (B-graphene). This material exhibits a stable, planar C-B sp(2) network, retaining graphene
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene functionalization is crucial for tuning its properties.
- Embedding foreign atoms/molecules is a key strategy for graphene modification.
Purpose of the Study:
- To develop an efficient, large-scale method for producing boron-doped graphene (B-graphene).
- To investigate the structural and electronic properties of B-graphene with varying boron content and substrates.
Main Methods:
- Chemical vapor deposition (CVD) using carborane molecules as precursors.
- Growth of B-graphene on Ni(111) and Co(0001) substrates.
- Characterization using scanning tunneling microscopy (STM).
Main Results:
- Achieved large-scale growth of B-graphene with up to 19 at. % boron.
- Formation of a planar C-B sp(2) network, resistant to air exposure.
- Demonstrated preferential sublattice doping at low boron concentrations on Ni(111).
- Observed lattice distortion and loss of sublattice unbalance at high boron content.
Conclusions:
- The developed CVD method enables efficient, large-scale production of B-graphene.
- Boron doping significantly influences graphene's structure and electronic properties.
- Sublattice doping is controllable at low concentrations, offering potential for tailored electronic behavior.
