Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

1.1K
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
1.1K
MOSFET01:16

MOSFET

1.7K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Experimental infection of wild <i>Mastomys natalensis</i> with the parasitic nematode <i>Trichuris mastomysi</i>.

Journal of helminthology·2026
Same author

Unconventional bipartite entanglement in the quantum dimer magnet Yb<sub>2</sub>Be<sub>2</sub>SiO<sub>7</sub>.

Nature communications·2026
Same author

Passive-scalar dispersion in floating-roof tank cavities: Aspect ratio dependence and actionable insights.

The Science of the total environment·2025
Same author

Partitioning Social and Spatial Drivers of Infection Risk.

Ecology and evolution·2025
Same author

Narrow linewidth III-V-on-SiN laser with extended frequency chirp capability based on micro-transfer printing for high resolution distributed acoustic sensing.

Optics express·2025
Same author

Ultra-compact InGaAs/GaAs nano-ridge laser monolithically grown on 300 mm silicon substrate.

Optics letters·2025
Same journal

Gaussian-modulated continuous-variable quantum key distribution over 60 km fiber using an integrated silicon photonic receiver.

Optics letters·2026
Same journal

E2E-OCT: end-to-end joint learning model using optical coherence tomography images for vocal cord leukoplakia diagnosis.

Optics letters·2026
Same journal

Holographic generation of panoramic 3D scenes by concave ellipsoidal mirror reflection.

Optics letters·2026
Same journal

Dual-pilot phase recovery with pair-wise maximum-ratio combining for coherent PONs.

Optics letters·2026
Same journal

Mapping the whispering gallery modes of a CaF<sub>2</sub> disk resonator with half-tapered fibers to estimate the fundamental mode volume.

Optics letters·2026
Same journal

Quantitative estimation of deep-subwavelength scale via dark-field scattering axial energy concentration decay profiles.

Optics letters·2026
See all related articles

Related Experiment Video

Updated: Apr 8, 2026

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
08:48

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

8.1K

III-V-on-silicon anti-colliding pulse-type mode-locked laser.

S Keyvaninia, S Uvin, M Tassaert

    Optics Letters
    |July 1, 2015
    PubMed
    Summary
    This summary is machine-generated.

    This study presents a novel III-V-on-silicon passively mode-locked laser. It achieves a 4.83 GHz repetition rate with 3 ps pulses and over 9 mW output power.

    More Related Videos

    Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements
    14:18

    Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

    Published on: February 28, 2016

    12.0K
    Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator
    07:42

    Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator

    Published on: December 15, 2021

    3.6K

    Related Experiment Videos

    Last Updated: Apr 8, 2026

    Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
    08:48

    Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

    Published on: November 22, 2019

    8.1K
    Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements
    14:18

    Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

    Published on: February 28, 2016

    12.0K
    Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator
    07:42

    Rapid Repetition Rate Fluctuation Measurement of Soliton Crystals in a Microresonator

    Published on: December 15, 2021

    3.6K

    Area of Science:

    • Photonics
    • Semiconductor Lasers
    • Integrated Optics

    Background:

    • III-V-on-silicon technology enables advanced photonic integrated circuits.
    • Passively mode-locked lasers are crucial for high-speed optical communications and signal processing.

    Purpose of the Study:

    • To demonstrate a novel anti-colliding pulse-type III-V-on-silicon passively mode-locked laser.
    • To characterize its performance, including repetition rate, pulse width, linewidth, and output power.

    Main Methods:

    • Utilized a III-V-on-silicon distributed Bragg reflector as an outcoupling mirror.
    • Implemented the mirror partially underneath the III-V saturable absorber for anti-colliding pulse operation.
    • Characterized the laser output using optical and radio-frequency (RF) spectrum analyzers.

    Main Results:

    • Achieved passive mode-locking at a 4.83 GHz repetition rate.
    • Generated optical pulses with a duration of 3 picoseconds (ps).
    • Demonstrated a fundamental RF tone with a 1.7 kHz 3 dB linewidth and over 9 mW of waveguide-coupled output power.

    Conclusions:

    • The presented III-V-on-silicon laser design is effective for generating short pulses at high repetition rates.
    • This technology holds promise for compact and high-performance integrated photonic devices.
    • The demonstrated performance metrics are suitable for various applications in optical communications and sensing.