Few-layered titanium trisulfide (TiS3) field-effect transistors.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Titanium trisulfide (TiS3) is an emerging layered semiconductor with potential for electronic applications.
• Large, millimeter-long TiS3 whiskers can be synthesized via direct reaction of titanium and sulfur.

Purpose of the Study:

• To investigate the electronic properties of exfoliated few-layered TiS3 field-effect transistors (FETs).
• To explore the impact of atomic layer deposition (ALD) of alumina on TiS3 FET performance.

Main Methods:

• Exfoliation of TiS3 whiskers using the adhesive tape method.
• Fabrication of TiS3 field-effect transistors (FETs).
• Characterization of electronic transport properties before and after Al2O3 ALD.

Main Results:

• Exfoliated TiS3 FETs demonstrated n-type transport with mobilities of 18-24 cm(2) V(-1) s(-1) and ON/OFF ratios up to 300.
• ALD of Al2O3 on TiS3 FETs significantly improved performance, yielding mobilities up to 43 cm(2) V(-1) s(-1) and ON/OFF ratios up to 7000.
• Alumina ALD also led to substantial improvements in subthreshold swing characteristics.

Conclusions:

• TiS3 is a competitive 2D transition metal chalcogenide for electronic applications.
• ALD of alumina is a viable method to enhance the performance of TiS3-based devices.
• TiS3 holds promise for emerging device applications in nanotechnology and materials science.