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Updated: Apr 7, 2026
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
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Electron-Hole Confinement Symmetry in Silicon Quantum Dots
Filipp Mueller1, Georgios Konstantaras1, Paul C Spruijtenburg1
1NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
Nano Letters
|July 3, 2015
Summary
We demonstrate ambipolar quantum dots in silicon capable of controlling both electrons and holes. This symmetry is crucial for advancing spin-based quantum information processing by enabling direct comparison and manipulation within the same environment.
Area of Science:
- Quantum Physics
- Condensed Matter Physics
- Materials Science
Background:
- Quantum dots are essential for quantum computing.
- Ambipolar devices offer versatile control over charge carriers.
Purpose of the Study:
- To investigate the properties of a gate-defined ambipolar quantum dot in intrinsic silicon.
- To explore the potential of ambipolar quantum dots for quantum information processing.
Main Methods:
- Electrical transport measurements were performed.
- Gate-defined quantum dot fabrication in intrinsic silicon.
- Analysis of gate capacitances and charging energies.
Main Results:
- Demonstrated ambipolar operation, allowing control of both electrons and holes.
- Observed electron-hole confinement symmetry.
- Changed dot occupancy by 20 charge carriers in each regime.
Conclusions:
- Ambipolar quantum dots in silicon show significant promise for spin-based quantum information processing.
- The ability to manipulate and compare electrons and holes in the same environment is a key advantage.
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