Electron beam induced current in the high injection regime.

Area of Science:

• Materials Science
• Semiconductor Physics
• Photovoltaics

Background:

• Electron Beam Induced Current (EBIC) is crucial for characterizing photovoltaic devices.
• High electron beam current can induce nonlinear effects due to high carrier generation rates.
• Understanding these nonlinear regimes is essential for accurate photovoltaic performance analysis.

Purpose of the Study:

• To develop an analytic model for EBIC response under high injection conditions.
• To predict the onset of nonlinear regimes and charge accumulation in photovoltaics.
• To provide a method for predicting EBIC lineshape in high injection scenarios.

Main Methods:

• Development of an analytic model for EBIC.
• Modeling charge accumulation and screening effects.
• Verification through 1D and 2D numerical simulations.
• Comparison with experimental data.

Main Results:

• The model accurately describes EBIC response in nonlinear regimes.
• It provides an estimate for the onset of high injection based on material resistivity and thickness.
• The model successfully predicts EBIC lineshape in the high injection regime.
• Experimental data aligns with the model's predictions regarding collection efficiency.

Conclusions:

• The presented analytic model offers a simplified approach to understanding EBIC in high injection regimes.
• It is a valuable tool for predicting photovoltaic device behavior under intense electron beam excitation.
• The model's consistency with simulations and experiments validates its applicability.