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Spin-Valve Effect in NiFe/MoS2/NiFe Junctions.

Weiyi Wang1, Awadhesh Narayan2,3, Lei Tang1

  • 1†State Key Laboratory of Surface Physics and Department of Physics and ‡Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China.

Nano Letters
|July 8, 2015
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Summary

This study introduces the first molybdenum disulfide (MoS2)-based spin-valves, utilizing monolayer MoS2 as a spacer. These devices show potential for spintronic applications, with observed spin-valve effects up to 240 K.

Keywords:
MoS2Spin valvespacer layerspintronics

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Spintronics

Background:

  • Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) possess unique properties suitable for spintronic applications.
  • The large bonding anisotropy in TMDs contributes to their exotic physical characteristics.
  • Monolayer molybdenum disulfide (MoS2) is explored as a nonmagnetic spacer material.

Purpose of the Study:

  • To develop and investigate the first MoS2-based spin-valves.
  • To explore the potential of monolayer MoS2 as a nonmagnetic spacer in spintronic devices.
  • To understand the electronic behavior and spin-valve effect in MoS2-based heterostructures.

Main Methods:

  • Fabrication of spin-valves using monolayer MoS2 as the nonmagnetic spacer sandwiched between Permalloy (Py) electrodes.
  • Experimental characterization of the spin-valve effect and magnetoresistance (MR) at various temperatures.
  • First-principles electron transport calculations for theoretical validation.

Main Results:

  • Vertically sandwiched MoS2 layers exhibited metallic behavior due to strong hybridization with Py electrodes, contrary to their expected semiconducting nature.
  • A spin-valve effect was observed up to 240 K.
  • The highest magnetoresistance (MR) achieved experimentally was 0.73% at low temperatures; theoretical calculations predicted an MR of ~9% for an ideal junction.

Conclusions:

  • TMDs, specifically MoS2, are identified as promising spacer materials for magnetic tunnel junctions.
  • The findings open new avenues for developing TMDs-based spintronic devices.
  • The study highlights the potential of MoS2 in advancing spintronic technologies.