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Researchers achieved direct carrier-envelope-offset (CEO) frequency detection using silicon nitride waveguides. This breakthrough enables robust CEO stabilization for modelocked lasers with significantly lower pulse energy requirements.

Area of Science:

Photonics and Optical Engineering
Laser Physics
Materials Science

Background:

Carrier-envelope-offset (CEO) frequency stabilization is crucial for precision spectroscopy and optical frequency combs.
Traditional methods often require high optical power or complex setups.
Supercontinuum generation (SCG) in waveguides offers a compact platform for nonlinear optical processes.

Purpose of the Study:

To demonstrate direct CEO frequency detection using SCG in a CMOS-compatible silicon nitride (Si(3)N(4)) waveguide.
To evaluate the efficiency and performance of Si(3)N(4) waveguides for f-to-2f interferometry.
To compare the performance of Si(3)N(4) waveguides with conventional photonic crystal fibers for CEO detection.

Main Methods:

Generation of a coherent supercontinuum spanning over 1.5 octaves in a Si(3)N(4) waveguide.

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Self-referencing of SESAM modelocked diode-pumped Yb:CALGO lasers using standard f-to-2f interferometry.

Direct detection of CEO beat signals without amplification for 100-MHz and 1-GHz lasers.

Main Results:

Successful direct CEO frequency detection was achieved in Si(3)N(4) waveguides.
High signal-to-noise ratios (SNR) exceeding 25 dB and 30 dB were obtained with low coupled pulse energies (30 pJ and 36 pJ).
Si(3)N(4) waveguides reduced the required peak power for CEO beat detection by over an order of magnitude compared to photonic crystal fibers.

Conclusions:

CMOS-compatible Si(3)N(4) waveguides are highly effective for direct CEO frequency detection.
This approach significantly lowers the power requirements for stabilizing modelocked lasers.
The findings pave the way for more accessible and compact optical frequency comb systems.