Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K
Types of Semiconductors01:20

Types of Semiconductors

1.8K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.8K
Diode: Reverse bias01:14

Diode: Reverse bias

2.7K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
2.7K
Diode: Forward bias01:20

Diode: Forward bias

2.9K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.9K
The Ideal Diode01:15

The Ideal Diode

2.6K
A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
2.6K
Small-signal Diode Model01:18

Small-signal Diode Model

1.9K
In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
1.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Photoionization Current Spectroscopy of Individual Silicon Vacancies in Silicon Carbide.

Nano letters·2026
Same author

3-D pillar-and-scaffold nanostructures for integrating nitrogen-vacancy doped nanodiamonds.

RSC advances·2026
Same author

Defect-Activated and Surface-Modified Hexagonal Boron Nitride Nanoparticles toward Intracellular Quantum Sensing.

Nano letters·2026
Same author

Myeloperoxidase-anti-neutrophil cytoplasmic antibody positivity and disease characteristics, treatment, and prognosis in eosinophilic granulomatosis with polyangiitis.

Scandinavian journal of rheumatology·2025
Same author

Functionalized Fluorescent Nanodiamonds with Millisecond Spin Relaxation Times.

ACS nano·2025
Same author

Integration of Er<sup>3+</sup> Emitters in Silicon-on-Insulator Nanodisk Metasurface.

Nanomaterials (Basel, Switzerland)·2025

Related Experiment Video

Updated: Apr 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Single-photon emitting diode in silicon carbide.

A Lohrmann1, N Iwamoto2, Z Bodrog3

  • 1School of Physics, The University of Melbourne, Victoria 3010, Australia.

Nature Communications
|July 25, 2015
PubMed
Summary

Researchers developed bright, stable single-photon emitters in silicon carbide. These devices offer fully polarized output and high count rates, paving the way for quantum technologies at room temperature.

More Related Videos

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

12.3K
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

9.0K

Related Experiment Videos

Last Updated: Apr 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

12.3K
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

9.0K

Area of Science:

  • Quantum Optics
  • Materials Science
  • Solid-State Physics

Background:

  • Single-photon emitters are crucial for quantum technologies like quantum cryptography and computation.
  • Silicon carbide is a promising material due to mature fabrication and observed quantum functionalities in defect systems.

Purpose of the Study:

  • To demonstrate the fabrication of bright, electrically driven single-photon emitting diodes in silicon carbide.
  • To characterize the performance of these emitters at room temperature.

Main Methods:

  • Fabrication of single-photon emitting diodes in silicon carbide.
  • Characterization of optical properties, including polarization, photon statistics, and count rates.
  • Assessment of device stability in continuous and pulsed modes.

Main Results:

  • Demonstrated fabrication of bright single-photon emitting diodes.
  • Achieved fully polarized output and superior photon statistics (>300 kHz count rate).
  • Confirmed stability in both continuous and pulsed operation at room temperature.

Conclusions:

  • Silicon carbide is an ideal material for developing robust single-photon sources.
  • The demonstrated emitters provide a foundation for large-scale integration in quantum applications.
  • These devices are suitable for quantum cryptography and linear optics quantum computing.