Fabrication and Optimization of Vertically Aligned ZnO Nanorod Array-Based UV Photodetectors via Selective...

Vertically aligned ZnO nanorod array (NRA)-based ultraviolet (UV) photodetectors (PDs) were successfully fabricated and optimized via a facile hydrothermal process. Using a shadow mask technique, the thin ZnO seed layer was deposited between the patterned Au/Ti electrodes to bridge the electrodes. Thus, both the Au electrodes could be connected by the ZnO seed layer. As the sample was immersed into growth solution and heated at 90 °C, the ZnO NRAs were crystallized and vertically grown on the ZnO seed layer, thus creating a metal-semiconductor-metal PD structure. To investigate the size effect of ZnO NRAs on photocurrent, the PDs were readily prepared with different concentrations of growth solution. For the ZnO NRAs grown at 25 mM of concentration, the PD with 10 μm of channel width (i.e., gap distance between two electrodes) exhibited a high photocurrent of 1.91 × 10(-4) A at an applied bias of 10 V under 365 nm of UV light illumination. The PD was optimized by adjusting the channel width. For 15 μm of channel width, a relatively high photocurrent on-off ratio of 37.4 and good current transient characteristics were observed at the same applied bias. These results are expected to be useful for cost-effective and practical UV PD applications.