Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Review of nanofluidic mass transport systems: engineering through physicochemical fields and interfacial properties.

Lab on a chip·2026

Same author

Dry Development of Dry Coated Sn-Based Inorganic Resist for Defect-Suppressed and High-Resolution Patterning Process.

Small methods·2026

Same author

Hydrogen Peroxide-Enabled High-Quality Transition Interface for Top-Gated Molybdenum Disulfide Field-Effect Transistors.

ACS nano·2026

Same author

A machine learning perspective on three decades of methanol synthesis: research framework and experimental operation insights.

Communications engineering·2026

Same author

Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Fundamental and technical advances in bulk photovoltaics of 2D van der Waals materials.

Nanoscale horizons·2026

Same journal

Corrigendum: Influence of nanoscale topology on the bactericidal efficiency of black silicon surfaces (2017 Nanotechnology28 245301).

Nanotechnology·2026

Same journal

Corrigendum: Thermal scanning probe lithography for the directed self-assembly of block copolymers (2017<i>Nanotechnology</i>28 175301).

Nanotechnology·2026

Same journal

Gold-nanoparticle-modified ITO electrodes: Effect of preparation methods on the electrochemical performance.

Nanotechnology·2026

Same journal

Nanoparticle manipulation with a carbon fiber tip in an electron microscope for µ-SQUID magnetometry.

Nanotechnology·2026

Same journal

Dual-frequency resonance tracking in switching spectroscopy piezoresponse force microscopy for ferroelectric thin films.

Nanotechnology·2026

Same journal

DFT and machine learning investigation of Au/Pt-decorated SnS₂ monolayers for asthma and COPD diagnosis.

Nanotechnology·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Apr 5, 2026

Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

Published on: October 10, 2013

Controlled MoS₂ layer etching using CF₄ plasma.

Min Hwan Jeon¹, Chisung Ahn, HyeongU Kim

¹SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Soebu-ro, Jangan-gu, Suwon, Gyeong gi-do, 440-746, Korea.

|August 13, 2015

Summary

This summary is machine-generated.

Researchers precisely controlled molybdenum disulfide (MoS2) thin film thickness using CF4 plasma etching. Subsequent H2S plasma treatment effectively removed etching-induced surface damage and fluorine contamination.

More Related Videos

Proof-of-Concept for Gas-Entrapping Membranes Derived from Water-Loving SiO2/Si/SiO2 Wafers for Green Desalination

Proof-of-Concept for Gas-Entrapping Membranes Derived from Water-Loving SiO2/Si/SiO2 Wafers for Green Desalination

Published on: March 1, 2020

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

Related Experiment Videos

Last Updated: Apr 5, 2026

Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

Published on: October 10, 2013

Proof-of-Concept for Gas-Entrapping Membranes Derived from Water-Loving SiO2/Si/SiO2 Wafers for Green Desalination

Proof-of-Concept for Gas-Entrapping Membranes Derived from Water-Loving SiO2/Si/SiO2 Wafers for Green Desalination

Published on: March 1, 2020

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

Area of Science:

Materials Science
Surface Science
Plasma Physics

Background:

Few-layered molybdenum disulfide (MoS2) is a promising 2D material for electronics.
Precise control over MoS2 layer thickness is crucial for device performance.
Plasma etching offers a potential route for large-area, controlled thinning of MoS2 films.

Purpose of the Study:

To investigate the controlled etching of few-layered MoS2 down to a monolayer using CF4 plasma.
To assess the surface damage and contamination induced by CF4 plasma etching.
To explore a method for recovering the etched MoS2 surface.

Main Methods:

Few-layered MoS2 films grown by plasma enhanced chemical vapor deposition (PECVD).
Etching using CF4 inductively coupled plasma (ICP).
Surface analysis using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS).
Surface recovery using H2S plasma treatment.

Main Results:

Controlled etching of MoS2 layers was achieved, with one monolayer removed after 20s of CF4 plasma exposure following a 20s incubation period.
CF4 plasma exposure induced surface damage and fluorine contamination on the remaining MoS2.
H2S plasma treatment for over 10 minutes effectively removed the induced damage and fluorine contamination.

Conclusions:

Plasma-enhanced chemical vapor deposition (PECVD) grown MoS2 can be controllably etched to a monolayer using CF4 plasma.
CF4 plasma etching introduces surface damage and fluorine contamination that can be detrimental to device performance.
H2S plasma treatment presents an effective method for surface remediation of etched MoS2 films, restoring surface quality.