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Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Capacitor With A Dielectric01:18

Capacitor With A Dielectric

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Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
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Network Covalent Solids02:18

Network Covalent Solids

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Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
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Trends in Lattice Energy: Ion Size and Charge02:54

Trends in Lattice Energy: Ion Size and Charge

27.3K
An ionic compound is stable because of the electrostatic attraction between its positive and negative ions. The lattice energy of a compound is a measure of the strength of this attraction. The lattice energy (ΔHlattice) of an ionic compound is defined as the energy required to separate one mole of the solid into its component gaseous ions. For the ionic solid sodium chloride, the lattice energy is the enthalpy change of the process:
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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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Encapsulated Silicene: A Robust Large-Gap Topological Insulator.

Liangzhi Kou1, Yandong Ma2, Binghai Yan3

  • 1Integrated Materials Design Centre (IMDC), School of Chemical Engineering, University of New South Wales , Sydney, NSW 2052, Australia.

ACS Applied Materials & Interfaces
|August 21, 2015
PubMed
Summary

Encapsulating silicene between transition-metal dichalcogenides (TMDCs) enhances its quantum spin Hall (QSH) effect. This novel approach creates a robust topological insulator for advanced electronic devices.

Keywords:
encapsulationfirst-principles calculationslarge gapproximity effectsilicenetopological insulator

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Silicene exhibits the quantum spin Hall (QSH) effect, promising for microelectronic devices.
  • Challenges include silicene's small band gap and environmental instability, hindering QSH exploration.

Purpose of the Study:

  • To propose a method for overcoming the limitations of silicene for QSH applications.
  • To enhance the band gap and stability of silicene for practical device use.

Main Methods:

  • First-principles calculations were employed to investigate silicene encapsulated within transition-metal dichalcogenides (TMDCs).
  • The proximity effect of TMDCs on silicene's electronic properties was analyzed.

Main Results:

  • Encapsulated silicene demonstrated a two-orders-of-magnitude increase in its nontrivial band gap.
  • The TMDCs layers effectively shielded silicene from environmental degradation, preserving the QSH state.
  • The enhanced band gap is attributed to the strong spin-orbit coupling from TMDCs.

Conclusions:

  • Encapsulated silicene acts as a stable two-dimensional topological insulator with a robust band gap.
  • This approach enables potential room-temperature applications for QSH devices.
  • The findings have significant implications for designing and fabricating novel QSH devices.