Wigner Crystal and Colossal Magnetoresistance in InSb Doped with Mn
S A Obukhov1, S W Tozer2, W A Coniglio2
1Department of Solid State Electronics, Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St Petersburg 194021, Russian Federation.
Scientific Reports
|August 27, 2015
Summary
Magnetotransport studies reveal resistivity saturation in manganese-doped indium antimonide (InSb) at low temperatures. Applied magnetic fields and pressure dramatically alter resistivity, suggesting potential Wigner crystal formation.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Physics
Background:
- Indium antimonide (InSb) is a narrow-gap semiconductor with unique electronic properties.
- Investigating the effects of doping, temperature, magnetic fields, and pressure is crucial for understanding its behavior.
- Manganese doping introduces magnetic impurities, potentially influencing electronic states.
Purpose of the Study:
- To investigate the magnetotransport properties of manganese-doped InSb single crystals.
- To explore the influence of temperature, magnetic field, and hydrostatic pressure on resistivity.
- To understand the underlying physical mechanisms, including potential Wigner crystal formation.
Main Methods:
- Magnetotransport measurements were conducted on nonmagnetic InSb single crystals doped with manganese.
- Experiments covered a temperature range from 300 K down to 40 mK.
- Measurements were performed under magnetic fields up to 25 T and hydrostatic pressures up to 17 kbar.
Main Results:
- Resistivity saturation was observed below 200 mK in the absence of a magnetic field.
- A colossal drop in resistivity (factor of 10^4) occurred around 4 T, followed by a gigantic increase (factor of 10^4) at 15 T.
- Hydrostatic pressure (17 kbar) increased the resistivity saturation temperature to 1.2 K.
Conclusions:
- The observed resistivity behavior suggests complex electronic interactions in manganese-doped InSb.
- The dramatic changes in resistivity under magnetic field and pressure point towards field- and pressure-induced electronic phase transitions.
- The findings support the possibility of a three-dimensional Wigner crystal forming due to light electrons and heavy holes in InSb.
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