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Updated: Apr 4, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

Development of splitting convergent beam electron diffraction (SCBED).

Florent Houdellier¹, Falk Röder², Etienne Snoeck¹

¹CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse, France.

Ultramicroscopy

|August 31, 2015

Summary

This summary is machine-generated.

Researchers developed splitting convergent beam electron diffraction (SCBED) to analyze strain in materials. This technique uses two electron probes to capture detailed diffraction patterns from different sample areas simultaneously.

Keywords:

Electron diffraction Electron holography Electron optic Strain measurement

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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Published on: June 27, 2022

Area of Science:

Materials Science
Solid State Physics
Electron Microscopy

Background:

Convergent Beam Electron Diffraction (CBED) is a powerful technique for analyzing crystal structures and strain.
Analyzing strain in materials often requires complex sample preparation or multiple measurements.
Existing methods may not provide simultaneous analysis of strained and unstrained regions.

Purpose of the Study:

To introduce and validate a novel electron diffraction technique called Splitting Convergent Beam Electron Diffraction (SCBED).
To demonstrate the capability of SCBED for precise strain evaluation in semiconductor multilayers.
To explore the potential of SCBED for advanced materials characterization.

Main Methods:

Utilizing a condenser electrostatic biprism to split a focused electron probe into two.
Employing dedicated electron optic conditions for sample illumination.
Analyzing the combined diffraction pattern from two distinct sample areas in a single measurement.

Main Results:

SCBED successfully generated combined diffraction patterns from Si/SiGe multilayers.
Distinct High-Order Laue Zone (HOLZ) line broadening was observed in the strained region due to surface relaxation.
Quantitative analysis of HOLZ lines allowed for precise determination of acceleration voltage and strain state.

Conclusions:

SCBED enables simultaneous analysis of strained and unstrained regions within a single diffraction pattern.
The technique provides accurate strain evaluation by combining acceleration voltage determination and HOLZ line analysis.
SCBED significantly expands the applicability of electron diffraction and electron holography for materials science research.