Related Experiment Video
Updated: Apr 4, 2026

10:36
Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
11.5K
Shot noise generated by graphene p-n junctions in the quantum Hall effect regime
N Kumada1,2, F D Parmentier2, H Hibino1
1NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan.
Nature Communications
|September 5, 2015
Summary
Graphene p-n junctions act as electronic beam splitters, controlling Dirac Fermion transport. Noise studies reveal junction length impacts this behavior, with longer junctions showing reduced noise due to energy relaxation.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Electronics
Background:
- Graphene's unique electronic properties enable investigation of Dirac Fermion transport.
- Quantum Hall effect in magnetic fields influences electron and hole mode behavior at p-n junctions.
Purpose of the Study:
- To investigate the shot noise of mode mixing at graphene p-n junctions.
- To demonstrate the role of p-n junction length in electronic beam splitter behavior.
Main Methods:
- Shot noise measurements were performed on graphene p-n junctions.
- The influence of varying p-n junction lengths was analyzed.
Main Results:
- Short p-n junctions exhibit noise consistent with electronic beam splitter behavior.
- Longer p-n junctions show reduced noise amplitude due to energy relaxation.
- The observed energy relaxation length exceeds typical mesoscopic device sizes.
Conclusions:
- Graphene p-n junctions function as tunable electronic beam splitters.
- Energy relaxation significantly affects transport properties in longer junctions.
- Graphene's properties are promising for electron quantum optics and quantum information processing.
Related Concept Videos
P-N junction
1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K
The Hall Effect
5.2K
Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
5.2K
Biasing of P-N Junction
2.6K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.6K
Biasing of Metal-Semiconductor Junctions
835
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
835
Metal-Semiconductor Junctions
1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
MOSFET: Enhancement Mode
1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K

