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Related Concept Videos

Atomic Force Microscopy01:08

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Atom Probe Tomography Analysis of Exsolved Mineral Phases
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Mapping interfacial excess in atom probe data.

Peter Felfer1, Barbara Scherrer2, Jelle Demeulemeester3

  • 1School of Aerospace Mechanical and Mechatronic Engineering, The University of Sydney, Australia; Australian Centre for Microscopy and Microanalysis, The University of Sydney, Australia.

Ultramicroscopy
|September 9, 2015
PubMed
Summary
This summary is machine-generated.

Modern atom probes enable 3D atomic-scale analysis of interfaces. This study introduces techniques for interfacial excess (IE) mapping and thin film thickness analysis, demonstrating their application in materials science.

Keywords:
Atom probe tomographyData analysisGrain boundaryInterfaceInterfacial excess mapping

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Science

Background:

  • Modern wide-angle atom probes provide atomic-scale 3D data for interfaces.
  • Analyzing segregated species distribution across interfaces is crucial for material properties.

Purpose of the Study:

  • To present techniques for interfacial excess (IE) mapping.
  • To demonstrate thin film thickness mapping using atom probe data.
  • To showcase applications in materials analysis.

Main Methods:

  • Development of models for interfacial excess (IE) mapping.
  • Application of atom probe tomography (APT) for 3D atomic-scale analysis.
  • Analysis of sampling statistics and underlying considerations for IE mapping.

Main Results:

  • Effective IE mapping techniques were developed and validated.
  • Thin film thickness mapping was achieved using the same principles.
  • Demonstrated applications include segregation analysis in stainless steel and metal-ceramic interfaces, and gate oxide thickness in fin-FETs.

Conclusions:

  • The presented techniques enable quantitative analysis of interfacial segregation and thin film thickness.
  • Atom probe tomography is a powerful tool for nanoscale materials characterization.
  • These methods advance the understanding of material interfaces and thin film structures.