Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Apr 4, 2026

Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

9.3K

Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning.

Ming Fang1,2, Johnny C Ho1,3,2

  • 1Department of Physics and Materials Science, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong.

ACS Nano
|September 10, 2015
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Activating Phase-Transition Toughening in van der Waals Semiconductor GaTe.

Nano letters·2026
Same author

Differential Image Sensor With Decoupled Static and Dynamic Outputs.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Gradient-distributed metal-halide dynamic memristors for adaptive and robust voiceprint recognition.

Nature communications·2026
Same author

Resolving intrinsic dislocation structure in perovskite crystals using pulsed electron beam with atomic resolution.

Nature communications·2026
Same author

Curvature-programmed nitrate electroreduction via single-atom protrusions on quantum dots.

Science advances·2026
Same author

Nanofluid-Assisted Synthesis of High-Entropy Alloy Nanoparticles.

Journal of the American Chemical Society·2026

Researchers developed a self-correcting atomic layer deposition (ALD) method for advanced 3D transistors. This technique significantly improves dielectric film deposition, enabling faster and more precise fabrication for next-generation electronics.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Device Fabrication

Background:

  • Three-dimensional (3D) transistors, such as FinFETs, require precise deposition of thin dielectric layers for enhanced performance and reduced power consumption.
  • Current fabrication methods face challenges in achieving subnanometer control and conformal coating on complex 3D structures.
  • Area-selective atomic layer deposition (AS-ALD) offers a promising route but is limited by poor selectivity for thicker films and long processing times.

Discussion:

  • A novel self-correcting ALD approach combines selective deposition with mild chemical etching.
  • This method overcomes limitations of conventional AS-ALD, enabling thicker film deposition and drastically reduced processing times.
  • The technique achieves selectivity for dielectric films with at least 10x greater thickness and 48x shorter processing times compared to standard AS-ALD.

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K
Large Area Substrate-Based Nanofabrication of Controllable and Customizable Gold Nanoparticles Via Capped Dewetting
05:51

Large Area Substrate-Based Nanofabrication of Controllable and Customizable Gold Nanoparticles Via Capped Dewetting

Published on: February 26, 2019

6.2K

Related Experiment Videos

Last Updated: Apr 4, 2026

Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

9.3K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K
Large Area Substrate-Based Nanofabrication of Controllable and Customizable Gold Nanoparticles Via Capped Dewetting
05:51

Large Area Substrate-Based Nanofabrication of Controllable and Customizable Gold Nanoparticles Via Capped Dewetting

Published on: February 26, 2019

6.2K

Key Insights:

  • The self-correcting ALD process demonstrates superior area selectivity and efficiency for fabricating 3D transistor channels.
  • Achieving precise subnanometer dielectric layer control is crucial for scaling advanced semiconductor devices.
  • This breakthrough addresses key challenges in high-κ dielectric deposition for 3D architectures.

Outlook:

  • The developed AS-ALD technique is a significant advancement toward industrial applications in electronics.
  • Potential applications extend to catalysis and photonics, requiring efficient and precise material deposition.
  • Further development could accelerate the adoption of AS-ALD in high-volume manufacturing processes.